中圖分類號(hào)： TN73
文獻(xiàn)標(biāo)識(shí)碼： A
DOI：10.16157/j.issn.0258-7998.191221
中文引用格式： 董亮，衛(wèi)明. 基于四路對(duì)脊鰭線的毫米波固態(tài)功率放大器設(shè)計(jì)[J].電子技術(shù)應(yīng)用，2020，46(8)：17-20.
英文引用格式： Dong Liang，Wei Ming. Design of solid-state power amplifier based on 4-ways antipodal finline in millimeter wave[J]. Application of Electronic Technique，2020，46(8)：17-20.

Design of solid-state power amplifier based on 4-ways antipodal finline in millimeter wave

Abstract： An design of a 5 W solid-state power amplifier in Q band by using antipodal finline-to-microstrip transition was presented.The four-way waveguide T-junction and antipodal finline-to-microstrip is designed and simulated through the high frequency structure simulator(HFSS).The simulation result show that the insert loss of four-way T-junction is less than 0.1 dB and the insert loss of antipodal finline-to-microstrip is less than 0.1 dB. The four-way power combiner/divider is made and test. The test result shows that the insert loss of four-way power combiner/divider is less than 2 dB in the the frequency range of 43.5 GHz~45.5 GHz, and the synthesis efficiency is more than 80%. A 2 Watt level die was selected for the amplifier module and the gold boding wire is connected the die to the microstrip. The test result shows that saturation power is more than 5.7 W,gain is more than 10.5 dB and efficiency is more than 9.5% in the frequency range of 43.5 GHz~45.5 GHz. This structure has a very broad application prospect in the field of millimeter wave power amplifier.

Key words : antipodal finline-to-microstrip；millimeter wave；solid-state power amplifier；insert loss；synthesis efficiency