中圖分類號： TN722
文獻標識碼： A
DOI：10.16157/j.issn.0258-7998.200302
中文引用格式： 彭林，李嘉進，梁釗銘，等. 基于LC巴倫的偽差分功率放大器設計[J].電子技術應用，2020，46(8)：9-12.
英文引用格式： Peng Lin，Li Jiajin，Liang Zhaoming，et al. Design of pseudo-differential power amplifier based on LC balun[J]. Application of Electronic Technique，2020，46(8)：9-12.

Design of pseudo-differential power amplifier based on LC balun

Abstract： In order to greatly improve the system capacity in local hotspots, the wireless communication infrastructure that can support high-frequency and wideband operation is required for ultra-dense networking. A 4.8～5.0 GHz three-stage high-gain and large-output power amplifier is designed using GaAs heterojunction bipolar transistor(HBT) process to be targeted for 5G microcells. The pseudo-differential structure is adopted to suppress the influence of ground parasitic inductance, while the conversion between single-ended and differential pairs is completed by off-chip low-loss LC balun. In conjunction with active adaptive bias network and RC negative feedback circuit, meanwhile applying the methods of wideband matching and predistortion compensation, ADS(Advanced Design System) simulations verified that the proposed power amplifier can achieve 35.8 dB power gain with 33.5% peak power-added efficiency at a center frequency of 4.9 GHz, and deliver not less than 35 dBm saturated output power in the operating band, which can meet the requirements of seamless coverage of network signals in typical application scenarios.

Key words : balun；pseudo-differential; radio frequency power amplifier(RFPA)；adaptive bias；5G microcell