NXP 無線模塊BUF725 簡介：

NXP的BUF725的可應用在GPS 的外置電線中。

其特點表現為：1）截止頻率可以做到一百GHz以上， 可以很好的工作在10GHz頻率以下。

2）與硅工藝兼容，易與CMOS 集成

3）相對GaAs，有成本優勢

4）從性能來說，SiGe 射頻器件噪聲低，開關速度快，溫度特性好，輸出功率大，效率高。
 
特征描述：

The BFU725F/N1 is a wideband silicon germanium amplifier transistor for high speed,

low-noise applications. The transistor is designed to be used for LNA applications up to

15 GHz such as GPS, satellite radio, cordless phone, wireless LAN and satellite LNB. The

BFU725F/N1 is packaged in a SOT343F that has 2 emitter pins to reduce emitter

inductance (for maximum gain).

The BFU725F/N1 is ideal for applications where cost is a concern. It also gives thedesigner flexibility in his design work, for bias current, frequency of operation,noise-figure, gain and P1dB.

方案介紹：

The demonstration boardenables testing of the device performance and requires no additional support circuitry.

The board is fully assembled with the BFU725F/N1, including input- and output-matching,to optimize the performance. For input matching, a compromise must be made betweenoptimum noise/maximum gain/RL/usable bandwidth of the application and customerrequirements. The board is mounted with signal input and output SMA connectors forconnection to RF test equipment.

基本參數
Frequency (GHz)      Noise figure (dB)      Associated gain (dB)
1.5                               0.42                            24
2.4                               0.47                            20
5.8                               0.7                             13.5
12                                1.1                             10

參考原理圖：





參考PCB圖：



詳情請參見：
http://www.cn.nxp.com/documents/user_manual/UM10483.pdf